Excellence in Power

Discover our Excellence in Power, featuring innovative technologies and solutions, highest quality levels, and low-carbon footprint products that support engineers in enhancing performance, reliability, and sustainability to build an all-electric society.
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Power Semiconductor Portfolio

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Latest news

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Ultra-compact DFN8x8 packaged 650V SiC MOSFETs from Toshiba enhance power density and efficiency in industrial equipment

Low figure of merit (RDS(ON) x Qgd) contributes to higher efficiency, pushing the performance envelope of high-voltage power system designs.

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Highly integrated gate driver photocoupler from Toshiba enhances safety when switching SiC MOSFETs in industrial applications

Built-in active Miller clamp simplifies design, saves space and lowers system cost.

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Toshiba introduces new 4-channel automotive high-speed digital isolators

AEC-100 compliant devices provide 100kV/μs common-mode transient immunity at data rates up to 50Mbps.

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Toshiba introduces new 4-channel automotive high-speed digital isolators

AEC-100 compliant devices provide 100kV/μs common-mode transient immunity at data rates up to 50Mbps.

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4-bit dual-supply bus transceivers from Toshiba support low voltage level-shifting in systems featuring widely-used communications protocols

Flexible options for managing UART or SPI interfaces using signal levels down to 0.8V

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600V 24mΩ MOSFET improves power supply efficiency

TK024N60Z1 offers the lowest on-resistance in the DTMOSVI 600V series

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Toshiba ships early samples of 1200V SiC MOSFETs in bare die format

New devices offer low resistance and high reliability for automotive traction inverter

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Toshiba's Innovation Centre

Be inspired by our technologies and solutions and discover how to place us at the heart of your innovations. 

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High-speed photorelays improve semiconductor tester efficiency

Turn-on times are up to 62% shorter than previous models

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Sneak Peak Demos

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Gate Drive Circuit Solution for SiC MOSFET Module

Flyer for Gate Driver Circuit for SiC Mosfet Module

The solution offers a built-in implementation of a SiC MOSFET Module. It provides an independent open-collector fault signal output of high-side and low-side. The output voltage is +20V (typ.) / -6.7V (typ.), the output current ±9.8A (max.) and the max. PWM frequency 50kHz.

TLP5231 – isolated pre-gate driver    SSM6K804R – n-ch MOSFET  

TPC8132 – p-ch MOSFET   TCR1HF50B – LDO Regulator

SSM3K15AFS – n-ch MOSFET  2SC6026MFV – npn transistor

 

 

Image of single channel H-Bridge driver with integrated current monitoring

Single channel H-Bridge driver with integrated current monitoring

The H-Bridge drivers TB67H453FNG/FTG provide an extended operating voltage range, max ratings and a built-In logic regulator for ultra-low standby current. As a benefit no external capacitor is needed. Target applications are robot vacuum cleaners, home and office applications, industrial equipment and many more.

TB67H453FNG   TB67H453FTG

 

 

Automotive Thermal Management

Toshiba's SmartMCDTM enables space and system cost savings in automotive applications. The device features an integrated microcontroller with a gate driver to create an effective solution for automotive pump,  fans and more. 

TB9M003FG       

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More Demos

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Press Pack IEGT (PPI)

Applications

  • Motor drives, Transmission & Distribution, Power quality

Highlights

  • Pressure contact with improved thermal fatigue
  • Low thermal impedance due to double side cooling
  • Moisture & weather resistant due to hermetic sealing
  • Electrically shorted in failure for proper system operation

Featured products

 

 

 

Picture show Sic Module inverters

SiC Module Inverter

Applications

  • Rail traction and Motor drive

Highlights

  • High efficiency by SiC modules
  • Compact design
  • 2-153A1A  package:  High mounting compatibility to Si IGBT module / Lower loss characteristics than Si IGBT module / Low stray inductance
  • RD237 - Gate Driver Solution for 1200V and 1700V SiC MOSFET Modules

Featured products

                1200V – 600A/400A SiC module in 2-153A1A  package

                1700V – 400A/250A SiC module in 2-153A1A  package

  • RD237 - Gate Driver Solution for 1200V and 1700V SiC MOSFET Modules

SiC Cube – Modular Multi-Level 3-Phase PFC

Applications

  • Power factor correction & AC/DC conversion

Highlights

  • High efficiency by SiC MOSFET
  • Multi-level, modular design

Featured products

  • TW045N120C – 3rd Generation SiC MOSFET
  •             Good reliability because of built-in SBD
  •             Fast switching because of low RDS(ON)*Qgd
  •             Wide VGSS rating
  • TLP5214A – Smart Gate-Driver
  •             High peak output current
  •             Wide power supply voltage range
  • TLP7820 – Isolation Amplifier
  •             High gain accurracy and bandwidth
  • TMPM4KNFYAFG – MCU
  •             160MHz Arm® Cortex®-M4 with Vector Engine

 

Picture shows a train with a iXPLV package and a 2-153A1A package added to it.

High Power SiC Modules

Applications

  • Rail traction and Motor drive

Highlights

  • iXPLV package (intelligent fleXible Package Low Voltage)
  •                 High reliability by using silver sintering technology
  •                 High channel temperature(Tj,max = 175°C)
  •                 Low stray inductance
  • 2-153A1A  package
  •                 High mounting compatibility to Si IGBT module
  •                 Lower loss characteristics than Si IGBT module
  •                 Low stray inductance

Featured products

  • MG600Q2YMS3        - 1200V / 600A /Package: 2-153A1A
  • MG400Q2YMS3        - 1200V /400A /Package: 2-153A1A
  • MG400V2YMS3        - 1700V / 400A /Package: 2-153A1A
  • MG250V2YMS3        - 1700V / 250A /Package: 2-153A1A
  • MG250YD2YMS        - 2200V / 250A /Package: 2-153A1A
  • MG800FXF2YMS3    - 3300V / 800A /Package: iXPLV
Picture shows a demo of a power tool.

Power Tool Demo

Applications

  • Power Tools
  • Gardening Tools

Highlights

  • Very compact design
  • Flexibility by interchangeable Control MCU and 
  • Power Stage Boards for 12-48V battery voltages

Featured products

  • Microcontroller specialized for Motor Control
  •             Recommended usage of TXZ+™4A Series, M4K Group
  •             Arm® Cortex®-M4 with Vector Engine*
                significantly improves system performance
  • TB67Z833SFTG – Programable Gate-Driver for 3-Phase motor
  •             Serial SPI Interface to control and diagonstics
  •             Optional integrated current sense amplifier
  • MOSFETs
  •             TPH1R204PB: 40V, 1.2mΩ, low-spike, 240A
  •             TPH2R408QM: 80V, 2.43mΩ, low-spike, 120A

*1 Vector Engine is an accelerator for field oriented control mathematical operation

Picture shows a demo of a fan, plus block diagram.

Fan Thermal Management, using SmartMCD™ 

Applications

  • Fan for thermal management in eMobility applications
  • Water pump

Highlights

  • Integrated solution for MCU and pre-driver
  • Flexibility by using different external MOSFETs

Featured products

  • TB9M003FG – SmartMCD™ for BLDC motors
  •             Cortex-M0, plus Vector Engine*
  •             Integrated gate driver
  • Automotive Power MOSFETs
  •             TPHR7904PB (40V, 0.79mOhm, 5x6mm²)
  •             XPN3R804NC (40V, 3.8mOhm, 3.3x3.6mm²)
  •             XSM6K519NW (40V, ~17mOhm, 2x2mm²)
  •             SSM6K809R, U-MOSⅧ-H, 2.9×2.8mm²

*1 Vector Engine is an accelerator for field oriented control mathematical operation

Company introduction

R&D Papers

Improved reliability of a 2200 V SiC MOSFET module with an epoxy-encapsulated insulated metal substrate

H. Kono et al., "Improved reliability of a 2200 V SiC MOSFET module with an epoxy-encapsulated insulated metal substrate", 04/2024 Power Conversion and Intelligent Motion (PCIM) Europe, Nürnberg, Germany, 2024, pp. 2017-2022. Doi: 10.30420/566262283

© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10654147)

 

Improving the Short-Circuit Capability of RC-IEGT by Backside Double P-ring Structure

R. Gejo et al., "Improving the Short-Circuit Capability of RC-IEGT by Backside Double P-Ring Structure", 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bremen, Germany, 2024, pp. 25-28. Doi: 10.1109/ISPSD59661.2024.10579684

© © 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10579684)

 

Paralleling 3.3-kV/800-A rated SiC-MOSFET Modules: An Optimization Method

H. Irifune et al., "Paralleling 3.3-kV/800-A rated SiC-MOSFET Modules: An Optimization Method", 042024 Power Conversion and Intelligent Motion (PCIM) Europe, Nürnberg, Germany, 2024, pp. 2023-2030. Doi: 10.30420/566262284

© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10654094)

 

Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs

T. Nishiwaki et al., "Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs", 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bremen, Germany, 2024, pp. 355-358. Doi: 10.1109/ISPSD59661.2024.10579695

© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10579695)

 

Videos

Watch our demo videos for 

  • our servo drive reference model for multi-axis motor control 
  • time sensitive network and multi-gigabit Ethernet up to 10GBit/s in industrial and automotive applications.

 

SmartMCD

Servo Drive Reference Model

Automated Guided Vehicle (AGV)

Time Sensitive Network

Journey of Motor Control

Empowering Motion

Toshiba has over 40 years of core competence delivering high quality, reliable motor control MCDs and MCUs to meet customer's needs, enhance energy efficiency,  make power driven applications more smoothly and support a more sustainable future.

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Innovation & Insights

Whitepapers, HV Lab, Articles & Podcasts

electronicnet.de: Interview

Armin Derpmanns, Vice President Marketing & Operations at Toshiba Electronics Europe, spoke with Iris Stroh from Markt&Technik, a renowned electronics publication in Germany. (*Interview in German language. Copyright: Markt & Technik, electronicnet.de)

 

Read the interview

The Electropages Podcast 

Host Robin Mitchell  and Armin Derpmanns, Vice President of Marketing and Operations at Toshiba discuss the growing role of silicon carbide, and Toshiba's strategic move towards sustainability and digitalization.

Whitepapers

Find detailed information about the benefits of our MOSFET-portfolio including SiC, HV- and LV-MOSFETs at our innovation centre.

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High Voltage Laboratory

Toshiba's high voltage laboratory in EMEA allows us to address  application-related questions from customers more rapidly.

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Power Focus Interview

Learn more about TEE’s focus on power in our interview* with the magazine Markt & Technik. *Please note that the interview is in German..

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Podcast Analog ICs

In the podcast Passion for technology the need for miniaturisation of analog devices is discussed.

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e-Learning
e-Learning
Learn anything about semiconductor through our online course.
Innovation Centre
Innovation Centre
At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.
FAQs
FAQs
Any question? Find the answers here.
Switch Mode Power Library
Simply select the appropriate MOSFET and then download various basic topologies for simulation with OrCAD®, LTspice®.

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