Power MOSFET (N-ch single VDSS≤30V)
Application Scope | High-Efficiency DC-DC Converters / Switching Voltage Regulators |
---|---|
Polarity | N-ch |
Generation | U-MOSⅧ-H |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
This product is under full production, but the following new product(s) are also recommended for new designs.
Part Number | Compatible level | Notes |
---|---|---|
TPH2R903PL | Package and characteristics are almost same | Almost same ON resistance |
TPH4R803PL | Package and characteristics are almost same | Slightly higher ON resistance |
Toshiba Package Name | SOP Advance |
---|---|
Package Image | |
Pins | 8 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
5.0×6.0×0.95 |
Package Dimensions | View |
Land pattern dimensions | View |
CAD data (Symbol, Footprint and 3D model) |
Download from UltraLibrarian® in your desired CAD format (Note) |
Please refer to the link destination to check the detailed size.
(Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 30 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 84 | A |
Power Dissipation | PD | 44 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 2.3 | V |
Gate threshold voltage (Min) | Vth | - | 1.3 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 4.7 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 3.2 | mΩ |
Input capacitance (Typ.) | Ciss | - | 1600 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 21 | nC |
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