SSM6L09FU

Not Recommended for New Design

Small Low ON resistance MOSFETs

Description

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch + P-ch
Generation π-MOSⅥ / π-MOSⅥ
Internal Connection Independent
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name US6
Package Image US6
JEITA SC-88
Package Code SOT-363
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.9
Package Dimensions View
Land pattern dimensions View
CAD data
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS +/-20 V
Drain current (Q1) ID 400 mA
Drain-Source voltage (Q2) VDSS -30 V
Gate-Source voltage (Q2) VGSS +/-20 V
Drain current (Q2) ID -200 mA
Power Dissipation PD 0.3 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 1.8 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=3.3V 1.7 Ω
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4V 1.2 Ω
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=10V 700
Input capacitance (Q1) (Typ.) Ciss - 20 pF
Gate threshold voltage (Q2) (Max) Vth - -1.8 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 2.7 Ω
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4V 4.2 Ω
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-3.3V 6.0 Ω
Input capacitance (Q2) (Typ.) Ciss - 22 pF

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Oct,2016

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