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200W AC-DC Power Supply

Block diagram

Block diagram Click to enlarge
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Efficiency curves

Efficiency curves Click to enlarge
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Description

  • Input voltage : AC 90 to 264V
  • Output voltage : DC 24V
  • Output power : 200W
  • Circuit topology : PFC, LLC + Synchronous Rectification

Features

  • Total efficiency : 93.5%(Vin=230V, 100% load)
  • Outline size : 225mm x 120mm x 65mm(including the base plate under the PCB and the heatsinks)
  • Provides appropriate power MOSFETs and photocouplers totally.

Reference design files

Design, Document

“Design・Document” contains the documents listed below.

Circuit diagram
BOM
Reference guide

Design, File

“Design・File” contains the contents listed below.

Circuit schematic

Toshiba items

Catalog
型番 製品 搭載部位・数量 特長
TK290A65Y MOSFET PFC・1 DTMOSV/650V/290mΩ(max)@VGS=10V/TO-220SIS
TK290A65Y MOSFET Primary side・2 DTMOSV/650V/290mΩ(max)@VGS=10V/TO-220SIS
TPH9R506PL MOSFET Secondary side・2 U-MOSIX-H/60V/9.5mΩ(max)@VGS=10V/High-speed switching type/SOP Advance
TLP785F Photocoupler Communication between primary side and secondary side・2 DC input/Transitor output type/BVS=5000Vrms/DIP4(lead forming)

Documents

Application Note

Application note
Name outline Date of issue
Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. 01/2018
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
describes how to calculate the temperature of discrete semiconductor devices. 12/2017
discusses temperature derating of the MOSFET safe operating area. 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017
Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017
Describes the oscillation mechanism of MOSFETs for switching applications 11/2017
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016

Catalog

Catalog
Name Outline Date of issue
Describes the lineups of Power MOSFETs and Small-signal MOSFETs by polarity and packages. 12/2017
Introduce Toshiba's wide lineups of Photocoupler and Photorelays 9/2017
Describes the lineups of power and small-signal MOSFETs. 3/2016
Product note for photo couplers and photo relays. This introduces product lineup for each package type. 5/2018

Contacts

If you have any queries, click one of these links:

Technical queries
Queries about purchasing, sampling and IC reliability
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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.