SSM6P35FU

Not Recommended for New Design

Small-signal MOSFET 2 in 1

Description

Application Scope High-Speed Switching / Analog Switches
Polarity P-ch×2
Generation π-MOSⅥ
Internal Connection Independent
Component Product (Q1) SSM3J35MFV
Component Product (Q2) SSM3J35MFV
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-363 (US6)
Package Image Toshiba SSM6P35FU Small-signal MOSFET 2 in 1 product US6 package image
JEITA SC-88
Package Code SOT-363
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.9
Package Dimensions View
Land pattern dimensions View
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

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(Note1)(Note2)

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(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1/Q2) VDSS -20 V
Gate-Source voltage (Q1/Q2) VGSS +/-10 V
Drain current (Q1/Q2) ID -100 mA
Power Dissipation PD 0.2 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1/Q2) (Max) Vth - -1.0 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4V 8.0 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=2.5V 11 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.5V 22 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.2V 44 Ω
Input capacitance (Q1/Q2) (Typ.) Ciss - 12.2 pF

Document

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Oct,2015

Feb,2019

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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