Products
Design & Development
Innovation Centre
At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.
Knowledge
Highlighted Topics
Further Materials
Other
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
Let the work function of a metal be Φm and that of an n-type semiconductor be Φn. When Φm < Φn, an ohmic junction is formed when the semiconductor is in contact with the metal.
Figure 2-4 shows the band diagram of an ohmic junction formed by an n-type semiconductor and a metal. The ohmic junction has no diffusion barrier. Therefore, application of external voltage causes current to flow regardless of its polarity. Unlike the Schottky junction, the ohmic junction does not exhibit diode-like rectifying properties. For example, the ohmic junction is used for bonding pads on a semiconductor chip to create interconnections with its package.