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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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What is the difference between rectifier diodes and typical switching diodes?
Both rectifier diodes and typical switching diodes are pn junction diodes. Although they are manufactured in almost the same manner, they are designed for different applications. Rectifier diodes have a forward current of 0.5 A or higher and are designed to convert alternating current (AC) from a mains supply to direct current (DC). In contrast, switching diodes are intended to be used for high-frequency applications (up to 1 MHz), diode logic, weak signal detection, diode clipping, etc.
Therefore, switching diodes are designed with a small junction area to provide relatively small capacitance and a rated current of 250 mA or less.
As a reference, the absolute maximum ratings (Table-1: Rectifying diodes, Table-2: Switching diodes) described in each datasheet are shown.
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 400 | V |
| Average forward current (Note 1) | IF(AV) | 0.4 | A |
| Non-repetitive peak forward surge current (Note 2) | IFSM | 8 | A |
| Forward pulse current (Note 3) | IFP | 14 | A |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | -55 to 150 | °C |
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Maximum (peak) reverse voltage | VRM | 85 | V |
| Reverse voltage | VR | 80 | V |
| Maximum (peak) forward current | IFM | 300 (*) | mA |
| Average forward current | IO | 100 (*) | mA |
| Surge current (10ms) | IFSM | 2 (*) | A |
| Power dissipation | PD (Note 2, 4) | 200 | mW |
| PD (Note 3) | 150 | ||
| Junction temperature | Tj (Note 2) | 150 | °C |
| Tj (Note 3) | 125 | ||
| Storage temperature | Tstg (Note 2) | -55 to 150 | °C |
| Tstg (Note 3) | -55 to 125 |
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