Ideal Diode Controller with Reverse Polarity Protection and Overvoltage Protection

－Contributing to Lower Power Loss and Miniaturization of Automotive Equipment－
Ideal Diode Controller with Reverse Polarity Protection and Overvoltage Protection

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched the ideal diode[1] controller "TPD7110F" that allows safe power control in automotive systems and contributes to design flexibility and space-saving.

In recent years, as automotive ECUs (Electronic Control Units) have become more advanced, their current consumption has also increased. Traditionally, diodes have been used for reverse polarity protection of power supplies and for reverse current blocking on the load side.
However, rising current demands now require larger diodes and additional heat dissipation, which hinders equipment miniaturization.
As a result, demand has been growing for ideal diodes that suppress heat generation by reducing power loss during conduction in power lines, and supporting miniaturization.
In addition, redundant configurations[2] are required for automotive safety design, accelerating the trend towards redundancy in power systems and increasing the importance of ideal diode controllers in such systems.

To meet these needs, through the built-in charge pump circuit (with an internal capacitor) and its combination with an N-channel MOSFET, the product enables the configuration of a low-loss ideal diode. In addition to reverse polarity protection and reverse current blocking from the load side, it also incorporates an overvoltage protection. By using multiple units of this product, redundant power systems can be constructed. Additionally, pairing with back-to-back MOSFETs enables ON/OFF control as a load switch.

Moreover, the low current consumption design achieves an operating current consumption of 100µA (typ.). Additionally, standby current consumption is 2µA (typ.), which helps reduce battery consumption. This helps to overall system efficiency and reduction of environmental impact.

Furthermore, by adopting Toshiba’s unique small package "PS-8" and combining it with low on-resistance N-channel MOSFETs to realize ideal diodes, it helps reduce power loss in a wide range of equipment and enables equipment miniaturization.

Toshiba will continue to expand its lineup of products that deliver lower loss, miniaturization, and high reliability, contributing to the development of a safe and sustainable mobility society.

Figure 1. Ideal diode
Figure 1. Ideal diode
Figure 2. Load switch and ideal diode
Figure 2. Load switch and ideal diode

Notes:
[1] An ideal diode is a circuit or device that aims for "ideal" characteristics while having the function of allowing current to flow in only one direction, like existing diodes (rectifying elements).
[2] Redundant configuration refers to a design policy that duplicates or multiplies important systems such as control systems and sensor systems to ensure the safety of autonomous vehicles.

Features

  1. Reverse polarity protection
  2. Overvoltage protection
  3. Low current consumption design minimizes battery load
    Operating current consumption=100µA (typ.)/Standby current consumption=2µA (typ.)
  4. Small package PS-8 for high-density mounting

 

Features Explanation

1. Reverse polarity protection

In automotive systems, connection errors with batteries or power lines may occur. The new product has a built-in reverse polarity protection circuit, which turns off the N-channel MOSFET during reverse connection to protect circuits and equipment from damage even if the power polarity is mistakenly reversed.

2. Overvoltage protection

When the battery voltage enters an overvoltage condition due to events such as voltage surges, the product turns OFF the N-channel MOSFET. This prevents the equipment on the load side from being damaged by overvoltage[3]. Once the battery voltage returns to its normal level, the product turns the N-channel MOSFET ON again.

Note:
[3] In the case where MOSFETs are used in a back‑to‑back configuration.

Figure 3. Operation diagram of overvoltage protection (and undervoltage protection)

VOVH: Overvoltage detection voltage, VOVL: Overvoltage release voltage,  VOVHYS: Overvoltage detection hysteresis
VUVL: Undervoltage detection voltage, VUVH: Undervoltage release voltage, VUVHYS: Undervoltage detection hysteresis
VGS: Gate-to-source voltage, VGS(1): High level output voltage(1), VGS(3): High level output voltage(3)

Figure 3. Operation diagram of overvoltage protection (and undervoltage protection)

3. Low current consumption design minimizes battery load
    Operating current consumption=100µA (typ.)
    /Standby current consumption=2µA (typ.)

Figure 4. Current consumption characteristics of TPD7110F
Figure 4. Current consumption characteristics of TPD7110F

This product achieves an extremely low operating current consumption of 100µA (typ.) for a product with a built-in charge pump capacitor, due to its low current consumption design. Additionally, standby current consumption is only 2µA (typ.), which helps reduce unnecessary battery consumption. This contributes to overall system efficiency and reduction of environmental impact.

4. Small package PS-8 for high-density mounting

Figure 5. Comparison of MSOP-8 and PS-8 packages
Figure 5. Comparison of MSOP-8 and PS-8 packages

TPD7110F adopts Toshiba’s unique small package PS-8 (SON8-P). Although it is an easy-to-mount lead type, its dimensions are extremely small at 2.9mm×2.8mm×0.8mm, and its mounting area is reduced to approximately 55% compared to the common small SOP package MSOP-8.
Furthermore, as mentioned earlier, this product has a built-in charge pump circuit (with an internal capacitor), achieving significant space-saving compared to other products that require external capacitors.

Applications

  • Body Control Module (BCM)
  • Battery Management System (BMS)
  • Head-Up Display (HUD)

Main Specifications

(Unless otherwise specified, Ta=25°C)

Part number TPD7110F
Package Name PS-8
Size (mm) 2.9×2.8
Pin pitch (mm) 0.65
Absolute
maximum
ratings		 Power supply voltage VDD(1) (V) -0.3 to 60
Power supply voltage under reverse connection
VDD(2) (V)		 -32
Input voltage (1) VIN (V) -0.3 to 6
Input voltage (2) VSENSE (V) -0.3 to 60
Input voltage (3) VSOURCE (V) -0.3 to 60
Output voltage VGATE (V) -0.3 to 60
Output source current IGS(-) (µA) Internal capacity
Output sink current IGS(+) (mA) 200
Allowable power dissipation PD (W) 0.99
Operating temperature Topr (°C) -40 to 125
Junction temperature Tj (°C) 150
Storage temperature Tstg (°C) -55 to 150
Operating range Operating supply voltage
VDD(opr) (V)		 Tj=-40 to 125°C 3 to 32
Electrical
characteristics		 Supply current IDD(ON1) (µA) VDD=12V, VIN=5V,
Tj=25°C		 Typ. 100
Supply current IDD(OFF1) (µA) VDD=12V, VIN=0V,
Tj=25°C		 Typ. 2
Protective functions Reverse polarity protection
Reverse current blocking
Overvoltage protection
Undervoltage protection
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