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SSM6L56FE

New Product

Small-signal MOSFET 2 in 1

Description

Application Scope High-Speed Switching
Polarity N-ch + P-ch
Generation U-MOSⅦ-H / U-MOSⅥ
Internal Connection Independent
RoHS Compatible Product(s) (#) Available
Assembly bases Thailand

Package Information

Toshiba Package Name ES6
Package Image ES6
JEITA SC-107C
Package Code SOT-563
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
1.6×1.6×0.55
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 20 V
Gate-Source voltage (Q1) VGSS +/-8 V
Drain current (Q1) ID 800 mA
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS +/-8 V
Drain current (Q2) ID -800 mA
Power Dissipation PD 0.15 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.5V 840
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.8V 480
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 300
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 235
Input capacitance (Q1) (Typ.) Ciss - 55 pF
Total gate charge (Q1) (Typ.) Qg VGS=4.5V 1.0 nC
Gate threshold voltage (Q2) (Max) Vth - -1.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4.5V 390
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 480
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.8V 660
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.5V 900
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.2V 4 Ω
Input capacitance (Q2) (Typ.) Ciss - 100 pF
Total gate charge (Q2) (Typ.) Qg VGS=-4.5V 1.6 nC

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Name Date

Oct,2020

Oct,2020

 

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(example)
MOQ(pcs) Reliability
Information
RoHS
SSM6L56FE,LM 4000 - Yes

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