TPCP8205-H

Not Recommended for New Design

Power MOSFET (N-ch dual)

Description

Application Scope Motor Drivers / Mobile Equipments
Polarity N-ch×2
Generation U-MOSⅥ-H
Internal Connection Independent
RoHS Compatible Product(s) (#) Please contact us.

Package Information

Toshiba Package Name PS-8
Package Image Toshiba TPCP8205-H Power MOSFET (N-ch dual) product PS-8 package image
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1/Q2) VDSS 30 V
Gate-Source voltage (Q1/Q2) VGSS +/-20 V
Drain current (Q1/Q2) ID 6.5 A
Power Dissipation PD 1.48 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1/Q2) (Max) Vth - 2.3 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4.5V 29
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=10V 26
Input capacitance (Q1/Q2) (Typ.) Ciss - 830 pF
Total gate charge (Q1/Q2) (Typ.) Qg VGS=10V 13.8 nC

Document

  • If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

Nov,2015

Technical inquiry

Contact us

Contact us

Frequently Asked Questions

FAQs

Notes

back to list

Do you want to add this page to your favorites?

Do you want to remove this page from your favorites?

Membership registration required
A new window will open