Power supply ON/OFF control and reverse connection protecting circuit (N-ch type)

Example of ON/OFF control and reverse connection protecting circuit using N-ch MOSFET for 12 V power lines

Power supply ON/OFF control and reverse connection protecting circuit (N-ch type)

Lineup

U-MOS Series 40 V N-ch MOSFET

Part number

Rated drain current [A]

On-resistance (Max)
[mΩ] @VGS = 10 V

Package

XPN3R804NC

40

3.8

TSON Advance(WF)

TK1R4S04PB

120

1.35

DPAK+

XPHR7904PS

150

0.79

SOP Advance(WF)

TPWR7904PB

150

0.79

DSOP Advance(WF)L

XPJR6604PB *

(200)

(0.66)

S-TOGL™

XPQR3004PB

400

0.30

L-TOGL™

*: Under development (Values enclosed in parentheses are tentative specifications. Specifications are subject to change without notice.)

Gate driver (for switch)

Part number TPD7104AF TPD7106F TPD7107F
Package PS-8 (2.8 x 2.9 mm) SSOP16 (5.5 x 6.4 mm) WSON10A (3 x 3 mm)
Function High side gate driver High side gate driver High side gate driver
Output 1 1 1

Features

  • Operating power supply voltage range: 5 to 18 V
  • Built-in power supply reverse connection protection function
    (Protective MOSFET control with back-to-back circuitry)
  • Operating power supply voltage range: 4.5 to 27 V
  • Built-in power supply reverse connection protection function
    (Protective MOSFET control with back-to-back circuitry)
  • Operating power supply voltage range: 5.75 to 26 V
  • Current sense output
  • Protective functions;
    overcurrent, overtemperature,
    GND disconnect, etc.
    reverse battery connection
  • Diagnosis output;
    overcurrent, load open, overtemperature, etc.

General purpose small signal MOSFET

Part number SSM3K7002KF SSM3J168F SSM3J66MFV
Package

S-Mini
(SOT-346)

S-Mini
(SOT-346)

VESM
(SOT-723)

VDSS [V] 60 -60 -20
ID [A] 0.4 -0.4 -0.8

RDS(ON)

@|VGS| = 4.5 V [Ω]

Typ. 1.2 1.4 0.31
Max 1.75 1.9 0.39
Drive voltage [V] 4.5 -4.0 -1.2
Polarity N-ch P-ch P-ch

General purpose small signal bipolar transistor

Package SOT-23F

USM (SOT-323)

UFM (SOT-323F)*

S-Mini (SOT-346)
Classification |VCEO| [V] |IC| [mA] NPN PNP NPN PNP NPN PNP
General purpose 50 150     2SC4116 2SA1586 2SC2712 2SA1162
50 500         2SC3325 2SA1313
Low noise 120 100     2SC4117 2SA1587 2SC2713 2SA1163
High current 50 1700       2SA2195*    
50 2000   TTA501        
50 2500 TTC501          

* indicates UFM package

Small signal bias resistor built-in transistor (BRT)

Part number NPN (BRT) PNP (BRT)
Package ES6 (SOT-563) RN1907FE RN2907FE
US6 (SOT-363) RN1901 RN2901
VCEO [V] 50 -50
IC [mA] 100 -100

TVS diode (for CAN communication)

Part number DF3D18FU DF3D29FU DF3D36FU
Package USM (SOT-323)
VESD [kV] @ISO 10605 ±30 ±30 ±20
VRWM (Max) [V] 12 24 28
Ct (Typ. / Max) [pF] 9 / 10 6.5 / 8
RDYN (Typ.) [Ω] 0.8 1.1 1.5

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* S-TOGL™ and L-TOGL™ are trademarks of Toshiba Electronic Devices & Storage Corporation.
* All other company names, product names, and service names may be trademarks of their respective companies.