SiC MOSFET Modules

Power semiconductors using SiC (silicon carbide), a new material, are superior to Si (silicon) power semiconductors (IGBT)　which are currently the mainstream, in high-speed switching propertie and are superior to those used in high-temperature environments. We responded to the need for higher voltage rating and larger current capacity for equipment for industrial applications, such as inverters and converters for railway vehicles, and photovoltaic inverters. And we provides the most suitable devices for low loss and miniaturization.

Technical Articles

MG800FXF2YMS3(3300 V/800 A 2in1)

The new product uses highly mounting compatible package named iXPLV (intelligent fleXible Package Low Voltage) to meet the needs for high-efficiency, compact equipment for industrial applications such as inverters and converters for railway vehicles, and renewable energy power generation systems.

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MG250YD2YMS3(2200 V/250 A 2in1)

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as photovoltaic power systems and energy storage systems.

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MG400V2YMS3(1700 V/400 A 2in1)

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.

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MG600Q2YMS3(1200 V/600 A 2in1)

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for industrial equipment, and renewable energy power generation systems.

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MOSFETs / SiC MOSFET Modules

Features of SiC MOSFET Modules
Our SiC MOSFET modules achieve high reliability, wide gate-to-source voltage, and high gate threshold voltage. In addition, the high heat tolerance and low inductance package brings out the performance of SiC sufficiently.

MOSFETs / SiC MOSFET Modules

Features of Toshiba SiC MOSFET Modules
Compared to IGBT module, the low-loss characteristics of SiC MOSFET module can reduce the total loss (switching loss + conduction loss). High-speed switching and low-loss operation also reduce the size of the filter and transformer and heat sink, enabling a compact, lightweight system.

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Mega-solar Inverters
Such as high efficiency and miniaturization are important in designing mega-solar inverter. Toshiba provides information on a wide range of semiconductor products suitable for inverter circuit unit, gate driving circuit unit, signal transmission unit, etc., along with circuit configuration examples.
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Reference Design

This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
In recent years, SiC MOSFET modules have become popular compared to conventional IGBT modules as they have a smaller size and lower loss, which is useful in power conversion applications such as industrial motor drives and railway inverters. This is a gate drive circuit with various protection functions which can safely drive a SiC MOSFET module.This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules. Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.
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