Contact us

Откроется новое окно Откроется новое окно

MOSFETS: Improving power switching, reducing noise

MOSFETS: Improving power switching, reducing noise

Alongside efficiency, thermal management and size, designers of power conversion applications need to consider switching speeds and EMI-related noise. The good news is that the latest MOSFET technologies not only reduce power consumption and heat dissipation – they also contribute to enhanced switching performance and reduced noise.

MOSFETs based on Toshiba’s latest UMOS VIII-H trench process, for example, offer excellent switching ripple suppression capability, which helps designers to reduce overall EMI noise. Target applications for the new MOSFET technology include automotive motors in 48V systems, DC-DC converters and load switches.

The new MOSFETs delivers a much tighter threshold voltage (Vth) specification – a very important consideration for switching applications - than previous devices. Tighter Vth specification can contribute to a dead time reduction in half-/H-/B6-bridge schemes. This is because the max Vth difference between low-side MOSFET and high-side MOSFET is smaller.

In applications where MOSFETs are connected in parallel, a tighter Vth spec leads to improved synchronous switching among paralleled MOSFETs.  As a result, the switching loss will be distributed more evenly among the MOSFETs.

Toshiba's white paper on the latest silicon and package advances for power MOSFETs provides more information on the capabilities of these new technologies.

Click here…

Click here to download the whitepaper

To Top
·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.