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TKR74F04PBNew Product

Power MOSFET (N-ch single 30V<VDSS≤60V)

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Application Scope High efficiency DC/DC converters / Motor drivers / Switching regulators
Polarity N-ch
Generation U-MOSⅨ-H
RoHS Compatible Product(s) (#) Available
Assembly bases Japan


Package Information

Package Image TO-220SM(W)
Toshiba Package Name TO-220SM(W)
Pins 3
Mounting Surface Mount
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain current ID 250 A
Power Dissipation PD 375 W
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Input capacitance (Typ.) Ciss - 14200 pF
Total gate charge (Typ.) Qg - 227 nC
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 0.00098 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 0.00074 Ω


PSpice PSpice Model[Jan,2016] (lib: 3KB)
Environment Information Certificate on Content of SVHC of REACH[Apr,2017] UPDATED (PDF: 43KB)
Application Note Structures and Characteristics: Power MOSFET Application Notes[Nov,2016] (PDF: 484KB)
Application Note Maximum Ratings: Power MOSFET Application Notes[Nov,2016] (PDF: 1075KB)
Application Note Electrical Characteristics: Power MOSFET Application Notes[Nov,2016] (PDF: 1092KB)
Application Note Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Nov,2016] (PDF: 1426KB)
Application Note Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Nov,2016] (PDF: 1125KB)
Catalog MOSFETs[Mar,2016] (PDF: 2526KB)
Catalog Part Number List: MOSFETs[Mar,2016] (PDF: 1295KB)

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