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About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Not Recommended for New Design
Power MOSFET (N-ch single 30V<VDSS≤60V)
Application Scope | DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers |
---|---|
Polarity | N-ch |
Generation | U-MOSⅨ-H |
Internal Connection | Single |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
For new designs, the following product(s) should be used instead of this product.
Part Number | Compatible level | Notes |
---|---|---|
TK1R4S04PB | Different package and similar characteristics | Slightly higher ON resistance |
XPHR7904PS | Different package and similar characteristics | Almost same ON resistance |
Toshiba Package Name | TO-220SM(W) |
---|---|
Package Image |
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Pins | 3 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
10.0×13.0×3.5 |
Package Dimensions | View |
Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 40 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 250 | A |
Power Dissipation | PD | 375 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 3.0 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=6V | 0.98 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 0.74 | mΩ |
Input capacitance (Typ.) | Ciss | - | 14200 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 227 | nC |
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