TKR74F04PB

不推薦用於新設計

Power MOSFET (N-ch single 30V<VDSS≤60V)

  • 相關參考設計(2)

產品概要

Application Scope DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

包裝資訊

Toshiba Package Name TO-220SM(W)
Package Image TO-220SM(W)
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
10.0×13.0×3.5
Package Dimensions 檢視
Land pattern dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 250 A
Power Dissipation PD 375 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Max) Vth - 3.0 V
Gate threshold voltage (Min) Vth - 2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 0.98
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 0.74
Input capacitance (Typ.) Ciss - 14200 pF
Total gate charge (Typ.) Qg VGS=10V 227 nC
Reverse recovery time (Typ.) trr - 144 ns
Reverse recovery charge (Typ.) Qrr - 180 nC

文檔

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Jan,2016

參考設計

Short circuit detection circuit block diagram of single-output High-Side N-Channel Power MOSFET Gate Driver application and circuit of the TPD7104AF.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7104AF
This reference design provides examples of application circuit and simulation for TPD7104AF which features short load protection, reverse power connection protection and others.
Example of TPD7106F Application Circuit.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7106F
This reference design provides examples of application circuit and simulation for TPD7106F which features power supply reverse connection, charge pumpccircuit and others.

應用

Automotive V2X
Such as reduction of power supply and signal noise and reduction of power consumption are important in designing V2X. Toshiba provides information on a wide range of semiconductor products suitable for RF block units, power supply units, etc., along with circuit configuration examples.

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常見問題

常見問答

Notes

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