TKR74F04PB

Not Recommended for New Design

Power MOSFET (N-ch single 30V<VDSS≤60V)

  • Related Reference Design(2)

Description

Application Scope DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name TO-220SM(W)
Package Image TO-220SM(W)
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
10.0×13.0×3.5
Package Dimensions 보기
Land pattern dimensions 보기
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(Symbol, Footprint and 3D model)
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(Note1)

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(Note2)

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 250 A
Power Dissipation PD 375 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 3.0 V
Gate threshold voltage (Min) Vth - 2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 0.98
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 0.74
Input capacitance (Typ.) Ciss - 14200 pF
Total gate charge (Typ.) Qg VGS=10V 227 nC
Reverse recovery time (Typ.) trr - 144 ns
Reverse recovery charge (Typ.) Qrr - 180 nC

Document

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Jan,2016

Reference Design

Short circuit detection circuit block diagram of single-output High-Side N-Channel Power MOSFET Gate Driver application and circuit of the TPD7104AF.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7104AF
This reference design provides examples of application circuit and simulation for TPD7104AF which features short load protection, reverse power connection protection and others.
Example of TPD7106F Application Circuit.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7106F
This reference design provides examples of application circuit and simulation for TPD7106F which features power supply reverse connection, charge pumpccircuit and others.

애플리케이션

Automotive V2X
Such as reduction of power supply and signal noise and reduction of power consumption are important in designing V2X. Toshiba provides information on a wide range of semiconductor products suitable for RF block units, power supply units, etc., along with circuit configuration examples.

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