Contact us

A new window will open A new window will open

SiC Schottky Barrier Diodes


Toshiba offers a wide range of 2nd Gen.650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A, in through-hole (TO-220) packages.
The 2nd Gen.SiC SBD series provides a 30% lower figure of merit (VF*QC)*1 and a higher surge peak forward current (IFSM) than the 1st Gen.SiC SBD series and therefore helps improve the efficiency and reduce the size of power supplies.





  • High surge peak forward current (IFSM):  Approx. 7 to 9 times the current rating, IF(DC)
  • Low figure of merit (VF*QC)*1:  Provides approx. 30% lower figure of merit than that of the Gen-1 SiC SBD series and therefore provides higher efficiency
  • Wide range of packaging options including insulated and surface-mount packages:  Addresses diverse design requirements




SiC SBDs are suitable for power factor correction (PFC) circuits in high-efficiency power supplies, chopper circuits, and freewheel diodes integrated in switching devices.

  • Consumer electronics and office equipment: 4K LCD TVs, projectors, multifunction copiers, etc.
  • Industrial equipment: Communication base stations, PC servers, etc.
  • AC-DC Power Supplies
  • DC-DC Power Supplies

*1  VF・QC  : The product of forward voltage and total charge (VF*QC) indicates the loss performance of SiC Schottky barrier diodes. When devices with the same current rating are compared, a device with a lower VF*QC provides a lower loss.


If you have any queries, click one of these links:

Technical queries
Queries about purchasing, sampling and IC reliability
To Top
·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.