SiC Schottky Barrier Diodes (SiC肖特基勢壘二極體)

SiC肖特基勢壘二極體（SBD）具有較高的反向額定電壓。除了具有短反向恢復時間（t rr )的SBD，東芝還提供具有結勢壘肖特基（JBS）結構的650-V SBD，該結構提供低洩漏電流（I r ) 和開關模式電源所需的高浪湧電流能力。這些設備有助於提高開關電源的效率。

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DFN 8×8

Package Size

W : 8.0 mm 0.31 inch
L : 8.0 mm 0.31 inch
H : 0.85 mm 0.033 inch
TO-220F-2L

Package Size

W : 10.0 mm 0.39 inch
L : 15.0 mm 0.59 inch
H : 4.5 mm 0.18 inch
TO-220-2L

Package Size

W : 10.05 mm 0.40 inch
L : 15.3 mm 0.60 inch
H : 4.45 mm 0.18 inch
TO-247

Package Size

W : 15.94 mm 0.63 inch
L : 20.95 mm 0.82 inch
H : 5.02 mm 0.20 inch

All package dimensions are guaranteed in millimeters as mentioned on datasheet. Package dimension in inches is round to 2 significant digits converted with 1mm=0.0393701inch.

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推薦產品

3rd generation SiC Schottky barrier diode (SBD)
It adopts the new schottky metal, and it is equipped with 3rd generation SiC SBD chip, which optimized junction barrier schottky (JBS) structure of 2nd generation. As a result, we have achieved industry-leading lowest forward voltage 1.2 V (Typ.), which is 17 % lower than that of the 2nd generation 1.45 V (Typ.). The 3rd generation products have improved the trade-offs between forward voltage and total capacitive charge, and the trade-offs between forward voltage and reverse current compared with the 2nd generation products. This reduces power dissipation and contributes to high efficiency of equipment.
詳細資料
3rd generation SiC Schottky barrier diode (SBD)
SiC SBD that achieves low switching losses
By using SiC, a device with high withstand voltage and low switching loss (low reverse recovery charge) has been realized.
Diodes / SiC Schottky Barrier Diodes
詳細資料
Contributes to high efficiency and low loss of high output power supply
Significantly reduced recovery loss compared to FRD: fast recovery diodes
Diodes / SiC Schottky Barrier Diodes
詳細資料
Improved JBS structure to reduce the leakage current and increase the surge current capability
The improved JBS structure has been applied to improve the leakage current of the SBD and the surge current capacity.
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詳細資料
SiC devices suitable for power supply circuits
SiC Schottky barrier diodes (SBDs) have achieved high breakdown voltages for SBDs, which are difficult to achieve with Si materials, and significantly reduced reverse-recovery times (charges) that could not be achieved with p-n junction diodes, such as Si-FRD(Fast Recovery Diode).
Diodes / SiC Schottky Barrier Diodes
詳細資料
High withstand voltage (reverse voltage) characteristics of SiC SBDs
A device with a high breakdown voltage has been realized with dielectric breakdown field strength nearly 10 times higher than that of Si.
Diodes / SiC Schottky Barrier Diodes
詳細資料

文件下載

名稱 日期

應用

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Such as low power consumption, miniaturization and robust operation are important in designing inverter/servo. Toshiba provides information on a wide range of semiconductor products suitable for power supply unit, motor driving circuit units, signal transmission units, etc., along with circuit configuration examples.
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Such as low power consumption and miniaturization are important in designing thermostat. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, isolation units, sensor signal input units, etc., along with circuit configuration examples.
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Such as low power consumption and miniaturization are important in designing server. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, motor driving unit, over temperature monitoring unit, etc., along with circuit configuration examples.
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詳細資料

參考設計

PCB Photo (example)
1.6 kW Server Power Supply (Upgraded)
Thanks to Toshiba’s latest power devices and digital isolator, this 1U size and 12 V output 1.6 kW server power supply achieves higher efficiency at whole load than the existing reference design which uses the same circuit topology. Design files and guides for circuit design and operation are available as reference design.
詳細資料
1.6 kW T-Type 3-Level PFC Power Supply
1.6kW T-Type 3-Level PFC電源
1.6kW AC-DC轉換器電源，具有T-Type 3-Level功率因數校正（PFC）電路。對各種電路的設計要點、設計數據、使用方法等進行說明。
詳細資料
Circuit diagram of single phase PFC power supply basic simulation circuit.
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This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing single phase PFC power supply.
詳細資料
Circuit diagram of interleaved PFC power supply basic simulation circuit.
Interleaved PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing interleaved PFC power supply.
詳細資料
Circuit diagram of bridgeless PFC power supply basic simulation circuit.
Bridgeless PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing bridgeless PFC power supply.
詳細資料
Features of 1.6kW, 80Plus Platinum class, high efficiency server AC-DC power supply .
1.6kW, 80Plus Platinum Class, High efficiency Server AC-DC Power supply
This reference design provides design guide, data and other contents of 1.6kW 80Plus Platinum class power supply using Semi-bridgeless/Isolated phase shift full bridge.
詳細資料

Simulation

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Parametric Search
LTspice®
Parametric Search

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