- General Top View
-
SEMICONDUCTOR View
-
Applications
Body Electronics
xEV
In-Vehicle Infortainment
Advanced Driver-Assistance Systems (ADAS)
Chassis
Infrastructure
BEMS/HEMS
Factory Automation
Commercial Equipment
IoT Equipment
Healthcare
Wearable Device
Mobile
Computer Peripherals
-
Products
Products
-
Design & Development
Design & Development
Innovation Centre
At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.
-
Knowledge
Knowledge
Highlighted Topics
Further Materials
- Where To Buy View
-
- STORAGE View
- COMPANY View
- Part Number Search
- Cross Reference Search
- Keyword Search
- Parametric Search
- Stock Check & Purchase
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
Power supply ON/OFF control and reverse connection protection circuit (P-ch type)
Example of ON/OFF control and reverse connection protecting circuits using P-ch MOSFET for 12 V power lines
Lineup
U-MOS series -40 V / -60 V P-ch MOSFET
| Part number | Drain-source Voltage | Drain current | On-resistance (Max) @VGS = -10 V |
Package |
|---|---|---|---|---|
| TJ90S04M3L | -40 V | -90 A | 4.3 mΩ | DPAK+ |
| TJ60S06M3L | -60 V | -60 A | 11.2 mΩ | |
| XPH3R114MC | -40 V | -100 A | 3.1 mΩ | SOP Advance(WF) |
| TJ200F04M3L | -40 V | -200 A | 1.8 mΩ | TO-220SM(W) |
General purpose small signal MOSFET
| Part number | SSM3K7002KF | SSM3J168F | SSM3J66MFV | |
|---|---|---|---|---|
| Package | ||||
| VDSS [V] | 60 | -60 | -20 | |
| ID [A] | 0.4 | -0.4 | -0.8 | |
RDS(ON) @|VGS| = 4.5 V [Ω] |
Typ. | 1.2 | 1.4 | 0.31 |
| Max | 1.75 | 1.9 | 0.39 | |
| Drive voltage [V] | 4.5 | -4.0 | -1.2 | |
| Polarity | N-ch | P-ch | P-ch | |
General purpose small signal bipolar transistor
Small signal bias resistor built-in transistor (BRT)
| Part number | NPN (BRT) | PNP (BRT) | |
|---|---|---|---|
| Package | ES6 (SOT-563) | RN1907FE | RN2907FE |
| US6 (SOT-363) | RN1901 | RN2901 | |
| VCEO (Max) [V] | 50 | -50 | |
| IC [mA] | 100 | -100 | |
TVS diode (for CAN communication)
| Part number | DF3D18FU | DF3D29FU | DF3D36FU |
|---|---|---|---|
| Package | USM (SOT-323) | ||
| VESD [kV] @ISO 10605 | ±30 | ±30 | ±20 |
| VRWM (Max) [V] | 12 | 24 | 28 |
| Ct (Typ. / Max) [pF] | 9 / 10 | 6.5 / 8 | |
| RDYN (Typ.) [Ω] | 0.8 | 1.1 | 1.5 |