Reverse Recovery Characteristic of Schottky Barrier Diodes (SBDs)

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The reverse recovery time (trr) of the SBD is determined by the LC resonance circuit based on the junction capacitance and the inductance of the external wiring.  (Since the junction capacitance is hardly influenced by temperature, trr is the same from room temperature to high temperature.)
For pn junction diodes, trr becomes longer as the temperature rises. As a result, the switching characteristics of the SBD become more and more advantageous, which makes it suitable for higher-frequency switching.

Equivalent circuit when reverse voltage is applied to SBD
Fig. 2-10(a)  Equivalent circuit when reverse voltage is applied to SBD
Characteristic of junction capacitance of SBD
Fig. 2-10(b) Characteristic of junction capacitance of SBD
Typical reverse characteristic of SBD
Fig. 2-10(c) Typical reverse characteristic of SBD

Chapter II : Diodes

Types of Diodes
Details
Functions of Rectifier Diodes
Details
Forward Characteristic of Rectifier Diodes (IF-VF Characteristic)
Details
FRDs (Fast Recovery Diodes)
Details
Voltage Regulator Diodes (Zener Diodes)
Details
TVS diode (ESD protection diode)
Details
Difference between TVS Diodes and Zener Diodes (1)
Details
Difference between TVS Diodes and Zener Diodes (2)
Details
Variable-capacitance Diodes (Varicap Diodes)
Details
Schottky Barrier Diodes (SBDs)
Details
Difference Depending on Metal of Schottky Barrier Diodes (SBDs)
Details
Characteristics Application of Various Diodes
Details

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