Reverse Recovery Characteristic of Schottky Barrier Diodes (SBDs)

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The reverse recovery time (trr) of the SBD is determined by the LC resonance circuit based on the junction capacitance and the inductance of the external wiring.  (Since the junction capacitance is hardly influenced by temperature, trr is the same from room temperature to high temperature.)
For pn junction diodes, trr becomes longer as the temperature rises. As a result, the switching characteristics of the SBD become more and more advantageous, which makes it suitable for higher-frequency switching.

Equivalent circuit when reverse voltage is applied to SBD
Fig. 2-10(a)  Equivalent circuit when reverse voltage is applied to SBD
Characteristic of junction capacitance of SBD
Fig. 2-10(b) Characteristic of junction capacitance of SBD
Typical reverse characteristic of SBD
Fig. 2-10(c) Typical reverse characteristic of SBD

Chapter II : Diodes

Types of Diodes
詳細資料
Functions of Rectifier Diodes
詳細資料
Forward Characteristic of Rectifier Diodes (IF-VF Characteristic)
詳細資料
FRDs (Fast Recovery Diodes)
詳細資料
Voltage Regulator Diodes (Zener Diodes)
詳細資料
TVS diode (ESD protection diode)
詳細資料
Difference between TVS Diodes and Zener Diodes (1)
詳細資料
Difference between TVS Diodes and Zener Diodes (2)
詳細資料
Variable-capacitance Diodes (Varicap Diodes)
詳細資料
Schottky Barrier Diodes (SBDs)
詳細資料
Difference Depending on Metal of Schottky Barrier Diodes (SBDs)
詳細資料
Characteristics Application of Various Diodes
詳細資料

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