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Chapter II : Diodes : Forward Characteristic of Rectifier Diodes (IF-VF Characteristic)

Forward characteristic of rectifier diode varies according to current level and temperature.
At low-current region, VF is low at high temperature, and the opposite is true at high-current region.
In general, the diode should be used with a sufficient temperature margin below the Q point, which is the cross point of the above two  conditions.

Forward Characteristic of Rectifier Diodes(IF-VF Characteristic)

(1)Blue area where carrier mobility is dominant: VF decreases as temperature increases. 
Since the carrier moves easily when it gets hot, VF is lower than at low temperature.

(2)Red area where carrier collision dominates: VF increases as temperature increases. 
When a large current flows, a lot of carriers move. In the case of high temperature, the probability of collision between carriers increases and VF becomes higher than at low temperature.

Chapter II : Diodes

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