Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Select Product Categories

Select Application

Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.

New Products / News

Innovation Centre

At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.

Is it OK to use the body diode (parasitic diode) between the drain and source for a particular purpose?

Yes, you can. Actually this diode is actively used in motor drive circuits, power supply circuits, etc. In the MOSFETs used for these applications, the body diode specification is described in the data sheet.

(The specified characteristics differ from product to product. Ta=25℃ unless otherwise specified.)

Characteristic Symbol Unit Description
Reverse drain current(DC)
Reverse drain current(pulsed)
IDR
IDRP
A The maximum current that can flow to the body diode of a MOSFET in the forward direction
Diode forward voltage VDSF V Drain-source voltage that appears when a current is applied to the body diode of a MOSFET in the forward direction
Reverse recovery time trr ns The time trr and the amount of charge Qrr required for the reverse recovery current to reach zero during the reverse recovery operation of the body diode under the specified test conditions. The peak current during this period is Irr.
Diode reverse recovery charge Qrr μC
Diode peak reverse recovery current Irr A
Diode dv/dt capability dv/dt V/ns The maximum voltage ramp allowed during the reverse recovery time of the diode

Data sheet description

Characteristic Symbol Test Conditions Min Typ Max Unit
Diode forward voltage VDSF IDR = 30.8 A, VGS = 0 V - - -1.7 V
Reverse recovery time trr IDR = 15.4 A, VGS = 0 V
-dIDR/dt = 100 A/μs
- 135 220 ns
Diode reverse recovery charge Qrr - 0.6 - μC
Diode peak reverse recovery current Irr - 10 - A
Diode dv/dt capability dv/dt IDR = 15.4 A, VGS = 0 V, VDD = 400 V 50 - - V/ns

For use of this diode, the maximum channel temperature (Tch (max)) specification is also applicable.

Electrical Characteristics: Power MOSFET Application Notes (PDF:1,092KB)

A new window will open