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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
型號需要超過三個文字以上
It is possible to actively use a body diode between drain and source. It is actually used in motor drive circuits, power supply circuits, etc.
The figure below shows the positions where body diodes are formed in MOSFET cross-section, and the equivalent circuitry considering parasitic elements.
For MOSFET used in these applications, we describe the specifications for body diodes in the datasheet.
Item |
Symbol |
Unit |
Description |
---|---|---|---|
Drain reverse current (continuous) |
IDR IDRP |
A |
The maximum forward current allowed for the body diode of the MOSFET. |
Forward voltage (diode) |
VDSF |
V |
Drain-source voltage when forward current is applied to the body diode. |
Reverse recovery time |
trr |
ns |
These are the time (trr) and charge (Qrr) until the reverse recovery current disappears in the reverse recovery operation of the body diode under the specified measuring conditions. The peak current at that time is Irr. |
Amount of reverse recovery charge |
Qrr |
μC |
|
Peak reverse recovery current |
Irr |
A |
|
Diode dv/dt ruggedness |
dv/dt |
V/ns |
Ruggedness the drain-to-source voltage fluctuation during diode reverse recovery. |
Item |
Symbol |
Measurement conditions |
Minimum |
Standard |
Maximum |
Unit |
---|---|---|---|---|---|---|
Forward voltage (diode) |
VDSF |
IDR = 30.8 A, VGS = 0 V |
- |
- |
-1.7 |
V |
Reverse recovery time |
trr |
IDR = 15.4 A, VGS = 0 V-dIDR/dt = 100 A/μs |
- |
135 |
220 |
ns |
Amount of reverse recovery charge |
Qrr |
- |
0.6 |
- |
μC |
|
Peak reverse recovery current |
Irr |
- |
10 |
- |
A |
|
Diode dv/dt tolerance |
Dv/dt |
IDR = 15.4 A, VGS = 0 V, VDD = 400 V |
50 |
- |
- |
V/ns |
The body diode is described in the application note "Electrical properties: Power MOSFET application note". Please refer to this as well.