Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Select Product Categories

Select Application

Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.

New Products / News

Innovation Centre

At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.

Why is VECO very low (0.3V) for Darlington transistors such as TLP187 and TLP387? What precautions should be taken when using such transistors?

TLP187

When a transistor in a Darlington configuration with base-emitter resistance is incorporated into an Si chip, stray diode Di is put between the emitter and the collector in an equivalent manner. Owing to this, for VECO, the characteristics in the forward direction of the Di also appear; VECO  is thus specified with a very low (0.3V) value. Through this Di element, a current flows between the emitter and the collector. The circuit must be designed so that the VECO value (0.3V) will not be exceeded.

A new window will open