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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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When a transistor in a Darlington configuration with base-emitter resistance is incorporated into an Si chip, stray diode Di is put between the emitter and the collector in an equivalent manner. Owing to this, for VECO, the characteristics in the forward direction of the Di also appear; VECO is thus specified with a very low (0.3V) value. Through this Di element, a current flows between the emitter and the collector. The circuit must be designed so that the VECO value (0.3V) will not be exceeded.