IEGT (PPI)

The new product ST2000JXH35A adopts newly developed trench-type IEGT chips with optimized cell structure, achieving high turn-off capability and high short-circuit withstand capability, making it suitable for applications that require high voltage.

Multiple IEGT chips are placed in an array on the same plane, and individual IEGT chips are uniformly pressed from both sides using a molybdenum plate. The collector and emitter electrodes of each IEGT chip are brought into contact with the corresponding copper electrodes of the press pack enclosure via the molybdenum plate by applying mechanical pressure. This not only makes electrical connections and but also allows heat dissipation.

IEGT is a high power device that can control large current with voltage drive which improves the sharp increase of the on-state voltage accompanying the increase in collector-emitter voltage by devising the element structure of the emitter of the IGBT*.