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Contributes to reducing loss of switching power supplies

80V N-Channel MOSFET with improved trade-off between on-resistance and charge characteristics
SOP Advance (N)

With the advent of an advanced information society, the amount of information handled every day has dramatically increased, and the increase in power consumed by data centers and information and communications equipment has become a problem on a global scale. Therefore, the demand of high-efficiency for switching power supplies that supply power to data centers and information and communications equipment has been increasing in recent years. Toshiba Electronic Devices & Storage Corporation contributes to higher-efficiency power supplies by developing power MOSFET suitable for switched mode power supplies.
In addition to reducing on-resistance (RDS(ON)), the 80V U-MOSX-H series products that are fabricated with the newest-generation process have improved the product of on-resistance and gate charge (RDS(ON) × Qg)*), the product of on-resistance and gate switch charge (RDS(ON) × QSW)*), and the product of on-resistance and output charge (RDS(ON) × Qoss)*), which are key figures of merit when used in switching applications such as switched mode power supplies, compared to the same voltage products of the previous generation process "U-MOSVIII-H". When a U-MOSX-H is used, the system can be reduced in power dissipation. In addition, the gate threshold voltage (Vth) range is narrowed, and the channel temperature rating (Tch) is increased to 175°C, which contribute to labor-saving and improved flexibility in designs.

* An index for comparing suitability for switching applications by calculating the product of on-resistance and charge quantity characteristics in a trade-off relationship. The smaller this value, the better the performance.

Features

  • Optimization of the cell structure by the latest generation process improves the trade-off between on-resistance and charge quantity characteristics
  • Low on-resistance characteristics realized by incorporation of the latest generation process and packaging technology
  • High rated channel temperature (Tch = 175°C)
  • Useful application notes, reference designs, and other documents  on the web save design cycle.
    Application Notes
    Reference Design Center

Key Characteristics

The table below shows the main characteristics of typical products equipped with SOP Advance packaging for U-MOSX-H series products and U-MOSVIII-H series products. With the latest processing techniques, U-MOSX-H Series offers a significant reduction in drain-to-source on-resistance. U-MOSX-H series products contribute to the reduction of equipment loss caused by on-resistance or the reduction of board area by reducing the number of mounted elements.

U-MOSX-H Series and U-MOSVIII-H Series Product Key Characteristics

 

Characteristics

U-MOSX-H Series

TPH2R408QM

U-MOSVIII-H Series

TPH4R008NH

Absolute maximum ratings

Drain-source voltage

VDSS(V)

80

80

Channel temperature

Tch(℃)

175

150

Electrical

characteristics

Gate threshold voltage

Vth(V)

@VDS = 10V,
ID = 1.0mA

2.5 to 3.5

2.0 to 4.0

Drain-source on-resistance

RDS(ON) typ(mΩ)

@VGS = 10V

1.9

3.3

Total gate charge

Qg typ(nC)

87

59

Gate switch charge

QSW typ(nC)

28

18

Output charge

Qoss typ(nC)

90

77

Input capacitance

Ciss typ(pF)

5870

4100

Switching figure of merit

U-MOSX-H series dramatically improves (reduces) RDS(ON)×Qg, RDS(ON)×QSW and RDS(ON)×QOSS, which are key performance indexes for MOSFET, by optimizing cell structures using the latest fine-pitched techniques. The figures below compare the performance indices of U-MOSX-H and U-MOSVIII-H series. These improvements in the figure of merit reduce the major losses such as conduction loss, drive loss, switching loss, and output charge loss, and contribute to higher efficiency in power supply equipment and lower device temperatures.

Conduction and drive losses
Conduction and drive losses
Conduction and switching losses
Conduction and switching losses
Conduction and output charge losses
Conduction and output charge losses

RDS(ON) : On-resistance (figure of merit for conduction loss)
Qg : Gate charge (figure of merit for drive loss)
QSW : Gate switch charge (figure of merit for switching loss)
QOSS : Output charge (figure of merit for output charge loss)

Part Number

TPH2R408QM
Stock Checking
TPN19008QM
Stock Checking

Datasheet

PDF

PDF

Package

(Width×Length×Height mm)

SOP Advance (N)
(5.15×6.10×1.0)

SOP Advance (N)

TSON Advance
(3.3×3.3×0.85)

TSON Advance

Absolute Maximum Ratings

Drain-source voltage

VDSS(V)

80

80

Channel temperature

Tch(℃)

175

175

Electrical Characteristics

Gate threshold voltage

Vth(V)

@VDS = 10V,
ID = 1.0mA

2.5 to 3.5

2.5 to 3.5

Drain-source on-resistance

RDS(ON) typ(mΩ)

@VGS = 10V

1.9

14.7

Total gate charge

Qg typ(nC)

87

16

Gate switch charge

QSW typ(nC)

28

5.5

Output charge

Qoss typ(nC)

90

16.5

Input capacitance

Ciss typ(pF)

5870

1020

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