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XPH6R30ANB

New Product

Power MOSFET (N-ch single 60V<VDSS≤150V)

Description

Application Scope DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
AEC-Q101 Qualified
RoHS Compatible Product(s) (#) Available
Assembly bases Japan

Package Information

Toshiba Package Name SOP Advance(WF)
Package Image SOP Advance(WF)
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
5.0×6.0×0.95
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 100 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 45 A
Power Dissipation PD 132 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 3.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 9.5
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 6.3
Input capacitance (Typ.) Ciss - 3240 pF
Total gate charge (Typ.) Qg VGS=10V 52 nC

Document

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Name Date

Jan,2020

 

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Notes

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