1. Small-Signal MOSFET
2. Pin count
3. Polarity and internal configuration
K : N-channel, single
J : P-channel, single
N : N-channel, dual
P : P-channel, dual
L : N-channel and P-channel (dual)
E : N-channel and P-channel (pre-wired as a load switch)
H : N-channel and SBD
G : P-channel and SBD
Q : PNP and P-channel
4. Serial number of the products
5. Package
3-pin | F: S-Mini FU: USM FS: SSM FV: VESM T: TSM TU: UFM CT: CST3 CTB: CST3B R: SOT-23F |
---|---|
4-pin | CT: CST4 |
5-pin | F: SMV FU: USV FE: ESV TU: UFV |
6-pin | FU: US6 FE: ES6 TU: UF6 CTD: CST6D NU: UDFN6/UDFN6B |
1. Package
TPC6:VS-6 Series
TPCF8:VS-8 Series
TPCP8:PS-8 Series
TPCC8:TSON Advance Series
TPC8:SOP-8 Series
TPCA8:SOP Advance Series
2. Polarity / Configuration
0: N-channel, single
1: P-channel, single
2: N-channel, dual
3: P-channel, dual
4: N-channel and P-channel, dual
A: N-channel and SBD
B: P-channel and SBD
J: P-channel and NPN
3. Serial number of the products
4. Additional information
-H:High-speed type
None:Low-on-resistance type
1. Package
TPN : TSON Advance Series
TPW: DSOP Advance Series
TP8 : SOP-8 Series
TPH : SOP Advance Series
SOP Advance(N) Series
TPE: SOP Advance(E) Series
2. Max. on-resistance
(at max drive conditions)
R46 = 0.46 mΩ
4R6 = 4.6 mΩ
100 = 10 x 100 = 10 mΩ
101 = 10 x 101 = 100 mΩ
3. Polarity / Configuration
0 : Single N-ch
1 : Single P-ch
2 : Dual N-ch
3 : Dual P-ch
4 : Dual N-ch + P-ch
A : Dual N-ch MOS + SBD
B : Dual P-ch MOS + SBD
4. Drain-source voltage (VDSS)
3: 25 to 34 V
4: 35 to 44 V
5: 45 to 54 V
6: 55 to 64 V
7: 65 to 74 V
8: 75 to 84 V
9: 85 to 94 V
A: 95 to 124 V
B: 125 to 149 V
C: 150 to 179 V
D: 180 to 199 V
E: 200 to 249 V
F: 250 to 299 V
5. Series
G: U-MOSVII
M: U-MOSVI
N: U-MOSVIII
P: U-MOSIX
Q: U-MOSX
6. Additional information
1 to 4: Serial number of products
5: HSD (high speed recovery diode) type
A: VGS = 10 V (Drive)
B: VGS = 6 V (Drive)
C: VGS = 4.5 V (Drive)
D: VGS = 2.5 V (Drive)
E: VGS = 2.0 V (Drive)
F: VGS = 1.8 V (Drive)
G: VGS = 1.5 V (Drive)
H: Low-rg, VGS = 10 V (Drive)
J: VGS = 1.2 V (Drive)
M: Low-rg, VGS = 6 V (Drive)
L: Low-rg, VGS = 4.5 V (Drive)
Q: Tch(max) = Guaranteed up to 175°C + ZD
R: Tch(max) = Guaranteed up to 150°C + ZD
S: Tch(max) = Guaranteed up to 175°C
T: Tch(max) = Guaranteed up to 150°C
U: Low spike
1. Package
XPN: TSON Advance
XP8: SOP-8
XPH: SOP Advance
XPJ: S-TOGL
XPQ: L-TOGL
XPY: TO-Leadless
XPW: DSOP Advance
2. Max. on-resistance
(at max drive conditions)
R46 = 0.46mOhm
4R6 = 4.6mOhm
100 = 10 x 100 = 10mOhm
101 = 10 x 101 = 100mOhm
3. Polarity / Configuration
0 : Single N-ch
1 : Single P-ch
4. Drain-source voltage (VDSS)
4: 35 to 44 V
6: 55 to 64 V
8: 75 to 84 V
A: 95 to 124 V
5. Series
K: U-MOSIV
M: U-MOSVI
N: U-MOSVIII
P: U-MOSIX
Q: U-MOSX
6. Additional information
1 to 4: Serial number of products
5: HSD (high speed recovery diode) type
A: VGS = 10 V (Drive)
B: VGS = 6 V (Drive)
C: VGS = 4.5 V (Drive)
D: VGS = 2.5 V (Drive)
S: Tch(max) = Guaranteed up to 175°C
1.
TK: N-channel
TJ: P-channel
2. Drain current (ID)
3. Package
A: TO-220SIS
C: I2PAK
E: TO-220
F: TO-220SM(W)
G: D2PAK
J: TO-3P(N)
L: TO-3P(L)
M: TO-3P(N)IS
N: TO-247
P: DPAK/New PW-Mold
Q: IPAK/ New PW Mold2
S: DPAK+
V: DFN8x8
Z: TO-247-4L (4-pin)
4. Drain-source voltage(VDSS):
Display value × 10 times = VDSS
06:VDSS = 60 V
10:VDSS = 100 V
5. Series
A: π-MOSIV
C: π-MOSVI
D: π-MOSVII
E: π-MOSVIII
J: U-MOSIII
K: U-MOSIV
M: U-MOSVI
N: U-MOSVIII
U: DTMOSII
V: DTMOSIII
W: DTMOSIV
X: DTMOSIV-H
6. Additional information (1)
1: Low-capacitance type
3: Low-on-resistance type
5: Fast body diode type
7. Additional information (2)
H : VGS = 10 V (Drive)
M : VGS = 6 V (Drive)
L : VGS = 4.5 V (Drive)
Z : With protection Zener diode between gate and source
1.
TK: N-channel
TJ: P-channel
2.
Max, on-resistance
VDSS = 400 V less than the product
(at max drive conditions)
R74 = 0.74 mΩ
8R2 = 8.2 mΩ
100 = 10 x 100 = 10 mΩ
101 = 10 x 101 = 100 mΩ
Max, on-resistance
VDSS = 400 V or more products
(at max drive conditions)
047 = 0.047 Ω
410 = 0.41 Ω
4K7 = 4.7 Ω
3. Package
A: TO-220SIS
C: I2PAK
E: TO-220
F: TO-220SM(W)
G: D2PAK
J: TO-3P(N)
L: TO-3P(L)
M: TO-3P(N)IS
N: TO-247
P: DPAK/New PW-Mold
Q: IPAK/ New PW Mold2
R: D2PAK+
S: DPAK+
U: TOLL
V: DFN8x8
Z: TO-247-4L (4-pin)
4. Drain-source voltage(VDSS):
Display value × 10 times = VDSS
04:VDSS = 40 V
10:VDSS = 100 V
5. Series
F: π-MOSⅨ
G: U-MOSVII
M: U-MOSVI
N: U-MOSVIII
P: U-MOSIX
Q: U-MOSX
Y: DTMOSⅤ
Z: DTMOSⅥ
6. Additional information
1 to 4 : Serial number of products
5 : HSD (high speed recovery diode) type
A : VGS = 10 V (Drive)
B : VGS = 6 V (Drive)
C : VGS = 4.5 V (Drive)
H : Low-rg, VGS = 10 V(Drive)
M : Low-rg, VGS = 6 V(Drive)
L : Low-rg, VGS = 4.5 V(Drive)
R : High rg (Internal Gate Resistance) type