600V Super Junction Structure N-channel Power MOSFET DTMOSⅥ Series "TK024N60Z1" Improves Efficiency of Power Supply
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched an N-channel power MOSFET, "TK024N60Z1," which utilizes the DTMOSⅥ 600V series process with a super junction structure. This device is suitable for servers in data centers, switched-mode power supplies for industrial equipment, and power conditioners for photovoltaic generators.
In recent years, the demand for low On-resistance products has increased to enhance the efficiency of power supply circuits. This product has been developed to meet that need. TK024N60Z1 achieves a drain-source On-resistance of 0.024Ω (max), making it the lowest On-resistance[1] in the DTMOSⅥ 600V series and reducing conduction loss. This improves the efficiency of power supplies and reduces heat generation.
Additionally, the package adopts TO-247 with versatile and high heat dissipation.
By optimizing the gate design and process, the DTMOSⅥ 600V series, which includes the new product, has reduced the value of drain-source On-resistance per unit area by approximately 13% and drain-source On-resistance×gate-drain charge―the figure of merit for MOSFET performance―by approximately 52% compared to Toshiba’s conventional generation DTMOSⅣ-H series products with the same drain-source voltage rating. In addition, Toshiba offers tools that support circuit design for switched-mode power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba will continue to expand DTMOSⅥ series lineup, and support energy conservation by reducing power loss in switched-mode power supplies.
Note:
[1] As of January, 2025, Toshiba survey.
Features
- The smallest On-resistance (0.024Ω (max) (VGS=10V)) in the DTMOSⅥ series
- Low RDS(ON)×Qgd (drain-source On-resistance×gate-drain charges) and high efficiency of switched-mode power supplies
Features Explanation
1. The smallest On-resistance (0.024Ω (max) (VGS=10V)) in the DTMOSⅥ series
TK024N60Z1 achieves the lowest On-resistance (0.024Ω (max) (VGS=10V)) in the DTMOSⅥ series, minimizing conduction loss and helps to improve the efficiency of the power supply.
Power circuit examples
2. Low RDS(ON)×Qgd (drain-source On-resistance×gate-drain charges) and High efficiency of switched-mode power supplies
By optimizing the gate design and process, DTMOSⅥ 600V series products have reduced the value of drain-source On-resistance per unit area by approximately 13%, and drain-source On-resistance×gate-drain charge ―the figure of merit for MOSFET performance― by approximately 52% compared to Toshiba’s current generation DTMOSⅣ-H series products with the same drain-source voltage rating.
This means the DTMOSⅥ series has a better trade-off between conduction loss and switching loss, which helps improve the efficiency of switched-mode power supplies.
RDS(ON)×Qgd Characteristics curve[2]
![RDS(ON)×Qgd Characteristics curve[2]](/content/dam/toshiba-ss-v3/master/en/semiconductor/product/mosfets/articles/600v-super-junction-structure-n-channel-power-mosfet-dtmos6-series-tk024n60z1-improves-efficiency-of-power-supply_features_4_en.png)
Note:
[2] Values measured by Toshiba.
Applications
- Switched-mode power supplies (data center servers, etc.)
- Power conditioners for photovoltaic generators
- Uninterruptible power supply
Main Specifications
(Unless otherwise specified, Ta=25°C)
Part number |
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|---|---|---|---|---|
Package |
Name |
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Size (mm) |
Typ. | 15.94×20.95×5.02 |
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Absolute maximum ratings |
Drain-source voltage VDSS (V) |
600 |
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Drain current (DC) ID (A) |
80 |
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Channel temperature Tch (°C) |
150 |
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Electrical characteristics |
Drain-source On-resistance RDS(ON) (Ω) |
VGS=10V | Max | 0.024 |
Total gate charge Qg (nC) |
Typ. | 140 |
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Gate-drain charge Qgd (nC) |
Typ. | 37 |
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Input capacitance Ciss (pF) |
Typ. | 8420 |
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Sample check & availability |
 |
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Related link
Follow the links below for more on the new product.
TK024N60Z1
Follow the link below for more on Toshiba’s MOSFETs.
MOSFETs
Related information
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