Features of Toshiba SiC MOSFET Modules

Compared to IGBT module, the low-loss characteristics of SiC MOSFET module can reduce the total loss (switching loss + conduction loss). High-speed switching and low-loss operation also reduce the size of the filter and transformer and heat sink, enabling a compact, lightweight system. This reduces the material cost of the inverter system. Furthermore, the feasibility of a fan-less cooling system improves reliability and reduces maintenance costs.

Loss-Comparison between Full SiC MOSFET Modules and IGBT Modules

Loss-Comparison between SiC MOSFET Modules and IGBT Modules
Condition: 2Level circuits Fc=7. 2kHz Fout=:50Hz, Iout=180Arms, Vdc=1090V
Compared to IGBT, the low-loss nature of SiC MOSFET reduces total loss. Estimation based on the above conditions results in a loss reduction of approximately 80%.

A 91% reduction is achieved by comparing the transformer size of a system with a full SiC MOSFET module and a system with a IGBT module.

A 91% reduction is achieved by comparing the transformer size of a system with a SiC MOSFET module and a system with a IGBT module.High-speed switching and low-loss operation reduce filter and transformer and heat sink size, enabling a compact, lightweight system.

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