-
My ToshibaSemicon
- 網站首頁 檢視
-
半導體 檢視
-
應用
Body Electronics
xEV
In-Vehicle Infotainment
Advanced Driver-Assistance Systems (ADAS)
Chassis
Infrastructure
BEMS/HEMS
Factory Automation
Commercial Equipment
IoT Equipment
Healthcare
Wearable Device
Mobile
Computer Peripherals
-
產品
-
開發/設計支援
-
技術知識
- 購買管道 檢視
-
- 儲存產品 檢視
- 公司資訊 檢視
- 型號查詢
- 交叉搜尋
- 關鍵字搜尋
- 參數搜尋
- 線上庫存查詢跟購買
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
型號需要超過三個文字以上
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
型號需要超過三個文字以上
Features of Toshiba SiC MOSFET Modules
Compared to IGBT module, the low-loss characteristics of SiC MOSFET module can reduce the total loss (switching loss + conduction loss). High-speed switching and low-loss operation also reduce the size of the filter and transformer and heat sink, enabling a compact, lightweight system. This reduces the material cost of the inverter system. Furthermore, the feasibility of a fan-less cooling system improves reliability and reduces maintenance costs.
Loss-Comparison between SiC MOSFET Modules and IGBT Modules
Condition: 2Level circuits Fc=7. 2kHz Fout=:50Hz, Iout=180Arms, Vdc=1090V
Compared to IGBT, the low-loss nature of SiC MOSFET reduces total loss. Estimation based on the above conditions results in a loss reduction of approximately 80%.
A 91% reduction is achieved by comparing the transformer size of a system with a SiC MOSFET module and a system with a IGBT module.High-speed switching and low-loss operation reduce filter and transformer and heat sink size, enabling a compact, lightweight system.
Related information
Queries about purchasing, sampling and IC reliability
線上庫存查詢跟購買
型號需要超過三個文字以上
| 器件型號 | Authorized Distributor | Stock Quantity | Date | Shopping Cart |
|---|
Through this website you are able to proceed to the website of our distributors ("Third Party Website") which is not under the control of Toshiba Corporation and its subsidiaries and affiliates (collectively "Toshiba"). The Third Party Website is made available to you as a convenience only and you agree to use the Third Party Website at your own risk. The link of the Third Party Website does not necessarily imply a recommendation or an endorsement by Toshiba of the Third Party Website. Please be aware that Toshiba is not responsible for any transaction done through the Third Party Website, and such transactions shall be subject to terms and conditions which may be provided in the Third Party Website.