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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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Features of Toshiba SiC MOSFET Modules

Compared to IGBT module, the low-loss characteristics of SiC MOSFET module can reduce the total loss (switching loss + conduction loss). High-speed switching and low-loss operation also reduce the size of the filter and transformer and heat sink, enabling a compact, lightweight system. This reduces the material cost of the inverter system. Furthermore, the feasibility of a fan-less cooling system improves reliability and reduces maintenance costs.

Loss-Comparison between Full SiC MOSFET Modules and IGBT Modules

Loss-Comparison between SiC MOSFET Modules and IGBT Modules
Condition: 2Level circuits Fc=7. 2kHz Fout=:50Hz, Iout=180Arms, Vdc=1090V
Compared to IGBT, the low-loss nature of SiC MOSFET reduces total loss. Estimation based on the above conditions results in a loss reduction of approximately 80%.

A 91% reduction is achieved by comparing the transformer size of a system with a full SiC MOSFET module and a system with a IGBT module.

A 91% reduction is achieved by comparing the transformer size of a system with a SiC MOSFET module and a system with a IGBT module.High-speed switching and low-loss operation reduce filter and transformer and heat sink size, enabling a compact, lightweight system.

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