1.6kW LLC Resonant AC-DC Converter for Servers

In order to reduce power consumption in data centers, the bus voltage of servers is increasingly changing to 48V.
This is the AC-DC converter for 48V servers. Equipped with Toshiba's latest generation of power MOSFETs and SiC diodes, it outputs 54.5V DC with high efficiency from 100V to 200V AC input.
This reference design provides explanations of the design points, usage methods, and adjustment methods of each part of the circuit, as well as design information including circuit diagrams, board patterns, etc. which can be useful for your design.

Board Appearance

Click on components for more details

Features

  • 80 PLUS Titanium-class high efficiency (at Vin = 230V) in 1U size
  • Conversion efficiency: 96.7% (at Vin = 230V, 100% Load)
  • Outline size: 317mm x 145mm x 43mm (including metal plate at the bottom of the board)
  • Equipped with latest generation power devices (MOSFETs, SiC diodes)

Description

Input voltage AC 90V to 264V
Output voltage DC 54.5V
Output power 0.8kW (at 100V input), 1.6kW (at 200V input)
Circuit topology Active Bridge + Interleaved PFC + 3-phase LLC + Synchronous Rectifier, Output ORing Circuit
Efficiency Curve

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

Used Toshiba Items

Part Number Device Category Portion Usage Description
Power MOSFET (N-ch 500V<VDSS≤700V) Active Bridge Circuit・4 N-ch MOSFET, 600 V, 0.024 Ω@10V, TO-247, DTMOSⅥ
Power MOSFET (N-ch 500V<VDSS≤700V) PFC Circuit・2 N-ch MOSFET, 600 V, 0.08 Ω@10V, TO-247, DTMOSⅥ
Power MOSFET (N-ch 500V<VDSS≤700V) Primary Side of LLC Resonant DC-DC Converter Circuit・6 N-ch MOSFET, 600 V, 0.125 Ω@10V, TO-220SIS, DTMOSⅥ
Power MOSFET (N-ch single 60V<VDSS≤150V) Primary Side of LLC Resonant DC-DC Converter Circuit・6, Oring Circuit・1 N-ch MOSFET, 80 V, 0.00243 Ω@10V, SOP Advance, U-MOSⅩ-H
SiC Schottky barrier diode PFC Circuit・2 650 V/8 A SiC Schottky Barrier Diode, TO-220-2L
TX03 3-Phase Control Signals Generator of LLC Resonant DC-DC Converter・1

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

애플리케이션

Server
Such as low power consumption and miniaturization are important in designing server. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, motor driving unit, over temperature monitoring unit, etc., along with circuit configuration examples.
세부 사항

문의

기술 문의

문의

문의

자주 있는 문의

자주 있는 문의
A new window will open