SSM3K329R

EOL announced

Small Low ON resistance MOSFETs

Description

Application Scope High-Speed Switching / Power Management Switches
Polarity N-ch
Generation U-MOSⅢ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOT-23F
Package Image SOT-23F
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.4×0.8
Package Dimensions 보기
Land pattern dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-12 V
Drain current ID 3.5 A
Power Dissipation PD 1.0 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 1.0 V
Gate threshold voltage (Min) Vth - 0.4 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 289
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 170
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4V 126
Input capacitance (Typ.) Ciss - 123 pF
Total gate charge (Typ.) Qg VGS=4V 1.5 nC

Document

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Mar,2015

Feb,2019

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

애플리케이션

Electronic Sphygmomanometer
Such as low power consumption and miniaturization are important in designing electronic sphygmomanometer. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, surge voltage protection units, motor driving units, sensor signal input units, etc., along with circuit configuration examples.

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Notes

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