TRS8A65F

SiC Schottky barrier diode

  • Related Reference Design(1)

Description

Application Scope Power factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters
Feature Chip design of 2nd generation
Number of Circuits 1
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TO-220F-2L
Package Image TO-220F-2L
Pins 2
Mounting Through Hole
Width×Length×Height
(mm)
10.0×15.0×4.5
Package Dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Forward DC current IF(DC) 8 A
Repetitive Peak Reverse Voltage VRRM 650 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Reverse current (Max) IR VRRM=650V 40 μA
Forward Voltage (Max) VF IF=8A 1.6 V
Forward Voltage (Typ.) VF IF=8A 1.45 V
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Oct,2024

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TRS8A65F,S1Q(S2 50 Yes

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Notes

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