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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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When using lower gate resistance, switching time becomes shorter, and ringing (damped oscillation) may occur.
Ringing can cause oscillation and EMI noise.
When using higher gate resistance, switching time becomes longer.
As a result, switching loss increases and heat is generated.
In the bridge circuit, a short circuit may occur across the upper and lower MOSFETs by combination of the gate resistances.
Therefore, it is necessary to consider the optimum gate resistance.
For MOSFET’s drive circuit, please refer to “MOSFET Gate Drive Circuit:Power MOSFET Application Notes.”