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Electrical characteristics of MOSFETs (Dynamic Characteristics tr/ton/tf/toff)

Switching characteristics

Since power MOSFETs are majority-carrier devices, they are faster and capable of switching at higher frequencies than bipolar transistors. 
Switching time measurement circuit and input / output waveform are shown below.

  1. td (on): Turn-on delay time
    The time from when the gate-source voltage rises above 10% of VGS until the drain-source voltage reaches 90% of VDS
  2. tr:Rise time
    The time taken for the drain-source voltage to fall from 90% to 10% of VDS
  3. ton:Turn-on time
    The turn-on time is equal to td (on)+ tr.
  4. td (off):Turn-off delay time
    The time from when the gate-source voltage drops below 90% of VGS until the drain-source voltage reaches 10% of VDS
  5.  tf:Fall time
    The time taken for the drain-source voltage to rise from 10% to 90% of VDS
  6. toff:Turn-off time
    The turn-off time is equal to td(off)+ tf.

Data sheet description

Characteristics Symbol Min Typ Max Unit
Switching time Rise time tr 13 ns
Turn-on time ton 26
Fall time tf 14
Turn-off time toff 63
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