Electrical characteristics of MOSFETs (Dynamic Characteristics　t_r/t_on/t_f/t_off)

Switching characteristics

Since power MOSFETs are majority-carrier devices, they are faster and capable of switching at higher frequencies than bipolar transistors. 
Switching time measurement circuit and input / output waveform are shown below.

1. t_{d (on)}: Turn-on delay time
   The time from when the gate-source voltage rises above 10% of V_GS until the drain-source voltage reaches 90% of V_DS
2. t_r：Rise time
   The time taken for the drain-source voltage to fall from 90% to 10% of V_DS
3. t_on：Turn-on time
   The turn-on time is equal to t_{d (on)}+ t_r.
4. t_{d (off)}：Turn-off delay time
   The time from when the gate-source voltage drops below 90% of V_GS until the drain-source voltage reaches 10% of V_DS
5.  t_f：Fall time
   The time taken for the drain-source voltage to rise from 10% to 90% of V_DS
6. t_off：Turn-off time
   The turn-off time is equal to t_d(off)+ t_f.

Data sheet description