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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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How to select a suitable high voltage MOSFET for the application that current flows in the body diode. (e.g. Bridge circuit)

Following body diode characteristics are important to select the MOSFET.
・Fast reverse recovery time trr
・Small peak reverse recovery current Irr
・Low forward voltage VF
In the operation of the bridge circuit, there is a Q2 turn on mode in a state that a circulate current flows through the Q1 diode (Figure 1 - ①). At this timing, the Q1 diode is reverse recovery mode.
During this mode, Q1 and Q2 are short-circuited(Figure 1 - ②), causing a large loss (Figure 1).

Generally reverse recovery time of high voltage MOSFET is longer than low voltage MOSFET’s.
Toshiba has a lineup of high speed diode (fast reverse recovery time) products with the high voltage MOSFET.
This lineup has "5" in the last digit of part number. (e.g. TK16A60W5)
Please refer to the lineup and consider using it. (Link of high speed diode MOSFETs lineup)
Figure 2 shows reverse recovery current comparison of high speed and standard type of diode.

A circulate current flows through the Q1 diode
高速ダイオード品とノーマル品の逆回復電流比較波形
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