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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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IGBTs are bipolar switching devices that use conductivity modulation and have a slower switching speed than unipolar MOSFETs. Particularly under high temperature conditions, the turn-off time becomes longer and switching losses become larger. However, IGBTs can easily achieve high voltage resistance and low on-resistance through conductivity modulation. Another feature is that the on-voltage does not increase significantly even under high current and high temperature conditions. Due to the above characteristics, IGBTs and MOSFETs each have their own advantages and disadvantages, and they are used in different application ranges from the perspective of output power and operating frequency.
In contrast, MOSFETs have a fast-switching speed and do not have a tail current that delays the switching time when turned off. For this reason, MOSFETs are commonly used in switching power supplies that require high switching frequencies.
In this way, IGBTs and MOSFETs are used in a wide range of applications such as home appliances and small industrial equipment, and they are used differently depending on the operating frequency and the benefits of power loss due to on-voltage. (See Table 1: Examples of major applications for IGBTs and MOSFETs.)
For information on the conductivity modulation effect and tail current, please refer to the following FAQ:
For information on the uses of IGBTs, please refer to the following FAQ:
In recent years, wide band gap semiconductors (SiC and GaN) have been introduced for these applications. Compared to conventional Si MOSFETs, they achieve high-speed switching and low on-resistance characteristics and are superior in operation in high-temperature environments. Please refer to the following page.
Switching Frequency | ~20kHz | 20~80kHz | 80kHz~ |
---|---|---|---|
IGBT | Trains, HEV/EV Large capacity motor control (General-purpose inverter) Industrial equipment Industrial robots |
Large UPS |
|
IGBT Or MOSFET |
Inverter circuits for air conditioners and refrigerators Medium capacity, small motor control Home appliances (electric fans, vacuum cleaners) Small industrial equipment Fan motors |
Induction cooker (IH) | |
MOSFET | Small UPS Power tools PFC circuit |
Switching power supplies in general (DC-DC converters) Chargers |
The following documents also contain related information.
* Company names, product names, and service names used in this FAQ may be of their respective companies.