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Because IGBTs are bipolar switching devices that use conductivity modulation, they exhibit slower switching speed, particularly longer turn-off time at high temperature, than unipolar MOSFETs. Therefore, IGBTs cause higher switching losses.
In contrast, IGBTs have advantages in that they can easily achieve high withstand voltage and have relatively low on-state voltage even at high current and high temperature.
Therefore, IGBTs and MOSFETs fabricated using silicon material have the following application areas: