TPN1200APL

Power MOSFET (N-ch single 60V<VDSS≤150V)

  • Related Reference Design(3)

Description

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TSON Advance
Package Image TSON Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.3×0.85
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 100 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 66 A
Power Dissipation PD 104 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.5 V
Gate threshold voltage (Min) Vth - 1.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 20
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 11.5
Input capacitance (Typ.) Ciss - 1425 pF
Total gate charge (Typ.) Qg VGS=10V 24 nC
Output charge (Typ.) Qoss - 24 nC
Reverse recovery time (Typ.) trr - 41 ns
Reverse recovery charge (Typ.) Qrr - 47 nC
Purchase and Sample
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Document

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Jun,2021

Jul,2021

Jan,2023

Sep,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TPN1200APL,L1Q 5000 Yes

Applications

Server
Such as low power consumption and miniaturization are important in designing server. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, motor driving unit, over temperature monitoring unit, etc., along with circuit configuration examples.

Technical inquiry

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Frequently Asked Questions

FAQs

Notes

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