TPN7R006PL

Power MOSFET (N-ch single 30V<VDSS≤60V)

  • Related Reference Design(1)

Description

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TSON Advance
Package Image TSON Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.3×0.85
Package Dimensions View
Land pattern dimensions View
CAD data
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 60 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 76 A
Power Dissipation PD 75 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 13.5
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 7
Input capacitance (Typ.) Ciss - 1440 pF
Total gate charge (Typ.) Qg VGS=10V 20 nC
Purchase and Sample
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Document

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May,2022

Jun,2022

Nov,2022

Dec,2023

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TPN7R006PL,L1Q 5000 Yes

Technical inquiry

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