Power MOSFET (N-ch single 30V<VDSS≤60V)
Application Scope | High-Efficiency DC-DC Converters / Switching Voltage Regulators |
---|---|
Polarity | N-ch |
Generation | U-MOSⅨ-H |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | TSON Advance |
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Package Image | |
Pins | 8 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
3.3×3.3×0.85 |
Package Dimensions | 檢視 |
Land pattern dimensions | 檢視 |
CAD data (Symbol, Footprint and 3D model) |
Download from UltraLibrarian® in your desired CAD format (Note) |
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項目 | 符號 | 值 | 單位 |
---|---|---|---|
Drain-Source voltage | VDSS | 60 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 76 | A |
Power Dissipation | PD | 75 | W |
項目 | 符號 | 條件 | 值 | 單位 |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 2.5 | V |
Gate threshold voltage (Min) | Vth | - | 1.5 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 13.5 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 7 | mΩ |
Input capacitance (Typ.) | Ciss | - | 1440 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 20 | nC |
Output charge (Typ.) | Qoss | - | 20 | nC |
Reverse recovery time (Typ.) | trr | - | 28 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 22 | nC |