2SK3798

Not Recommended for New Design

Power MOSFET (N-ch 700V<VDSS)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation π-MOSⅣ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TO-220SIS
Package Image TO-220SIS
JEITA SC-67
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
10.0×15.0×4.5
Package Dimensions View
CAD data
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 900 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 4.0 A
Power Dissipation PD 40 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 3.5 Ω
Input capacitance (Typ.) Ciss - 800 pF
Total gate charge (Typ.) Qg VGS=10V 26 nC

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