SSM6N09FU

Not Recommended for New Design

Small-signal MOSFET 2 in 1

Description

Application Scope High-Speed Switching
Polarity N-ch×2
Generation π-MOSⅥ
Internal Connection Independent
Component Product (Q1) SSM3K09FU
Component Product (Q2) SSM3K09FU
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOT-363 (US6)
Package Image Toshiba SSM6N09FU Small-signal MOSFET 2 in 1 product US6 package image
JEITA SC-88
Package Code SOT-363
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.9
Package Dimensions View
Land pattern dimensions View
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1/Q2) VDSS 30 V
Gate-Source voltage (Q1/Q2) VGSS +/-20 V
Drain current (Q1/Q2) ID 400 mA
Power Dissipation PD 0.3 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1/Q2) (Max) Vth - 1.8 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=3.3V 1.7 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4V 1.2 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=10V 700
Input capacitance (Q1/Q2) (Typ.) Ciss - 20 pF

Document

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Sep,2016

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