SSM6N09FU

不推薦用於新設計

Small-signal MOSFET 2 in 1

產品概要

Application Scope High-Speed Switching
Polarity N-ch×2
Generation π-MOSⅥ
Internal Connection Independent
Component Product (Q1) SSM3K09FU
Component Product (Q2) SSM3K09FU
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name SOT-363 (US6)
Package Image 東芝 SSM6N09FU Small-signal MOSFET 2 in 1產品 US6 封裝圖片
JEITA SC-88
Package Code SOT-363
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.9
Package Dimensions 檢視
Land pattern dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *2

Download from UltraLibrarian® in your desired CAD format
*1 *2

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Drain-Source voltage (Q1/Q2) VDSS 30 V
Gate-Source voltage (Q1/Q2) VGSS +/-20 V
Drain current (Q1/Q2) ID 400 mA
Power Dissipation PD 0.3 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Q1/Q2) (Max) Vth - 1.8 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=3.3V 1.7 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4V 1.2 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=10V 700
Input capacitance (Q1/Q2) (Typ.) Ciss - 20 pF

文檔

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Sep,2016

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