300W Isolated DC-DC Converter(Upgraded)

This design supports a wide input voltage range of DC 36 to 75V and provides a DC 12V output with a power capacity of 300W. Thanks to replacement of Toshiba latest MOSFET and digital isolator, and circuit optimization, it achieves higher efficiency at whole load condition compared with the existing reference design with the same topology.
We provide design information including key circuit design points, usage instructions, adjustment methods for each section, circuit diagrams, and PCB layout data to support your development.

Board Appearance
Board Appearance
TPN1200APL TPN1200APL TPN1200APL TPN1200APL TPN1200APL TPH2R70AR5 TPH2R70AR5 TPH2R70AR5 DCL520C00 DCL520C00

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Features

  • Equipped with Toshiba latest generation devices and circuit optimization achieve higher efficiency than the existing design.
  • Wide input voltage range of 36 to 75V and can be applied to 48V systems.
  • Conversion efficiency: 94.6% (at Vin = 48V, 100% Load)
  • Outline size: 82mm x 82mm x 24mm
  • The use of a wound structure transformer facilitates deployment in real world applications.

Specifications

Input voltage DC 36 to 75V
Output voltage DC 12V
Output power 300W
Circuit topology Phase Shift Full Bridge
Efficiency Curves
Efficiency Curves

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

*1:Actual PCB was designed on CR8000BD. The other files were made from CR8000BD file.

*2:The data was generated on CR8000BD.

Used Toshiba Items

Part Number Device Category Application Area – Qty Description
Power MOSFET (N-ch single 60V<VDSS≤150V) Primary-side･4 N-ch MOSFET, 100 V, 0.0115 Ω@10V, TSON Advance, U-MOSⅨ-H
Power MOSFET (N-ch single 60V<VDSS≤150V) Secondary-side･4 N-ch MOSFET, 100 V, 0.0027 Ω@10V, Qrr=55nC@100A/μs, SOP Advance(N), U-MOS11-H
Standard Digital Isolators Communication between primary-side and secondary-side･1 HIGH SPEED DIGITAL ISOLATORS, High-speed, 150 Mbps, 3000 Vrms, 8pin SOIC Narrow body

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

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